FET Feature Schottky Diode (Body)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 23A Ta 140A Tc
Input Capacitance (Ciss) (Max) @ Vds 4.11pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Rds On (Max) @ Id, Vgs 2.5mOhm @ 23A, 10V
Power Dissipation-Max 2.1W Ta 75W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ