IRF520
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL SINGLE WITH BUILT-IN DIODE TO-220AB SILICON Mosfet Transistor 9.2A 100V 0.27Ohm
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Buying Options
Total Price: USD $0.52
Unit Price: USD $0.52345
≥1 USD $0.52345
≥10 USD $0.43035
≥100 USD $0.4161
≥500 USD $0.4028
≥1000 USD $0.3895
Inventory: 116309
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 37A
Drain-source On Resistance-Max 0.27Ohm
Drain Current-Max (Abs) (ID) 9.2A
JEDEC-95 Code TO-220AB
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 1997
Physical
Transistor Element Material SILICON
Surface Mount NO
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