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IPP120N06S402AKSA1

Rochester Electronics, LLC
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 15.75pF @ 25V
Vgs(th) (Max) @ Id 4V @ 140μA
Rds On (Max) @ Id, Vgs 2.8mOhm @ 100A, 10V
FET Type N-Channel
Power Dissipation-Max 188W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series OptiMOS?
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Mounting Type Through Hole

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