Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 900V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.9A Tc
Input Capacitance (Ciss) (Max) @ Vds 1.1pF @ 100V
Vgs(th) (Max) @ Id 3.5V @ 460μA
Rds On (Max) @ Id, Vgs 800mOhm @ 4.1A, 10V
Power Dissipation-Max 104W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ