Avalanche Energy Rating (Eas) 290 mJ
DS Breakdown Voltage-Min 25V
Pulsed Drain Current-Max (IDM) 385A
Drain-source On Resistance-Max 0.0067Ohm
Drain Current-Max (Abs) (ID) 80A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 3.877pF @ 15V
Vgs(th) (Max) @ Id 2V @ 60μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 55A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 107W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ