HUFA76609D3S
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
/
Buying Options
Total Price: USD $0.36
Unit Price: USD $0.36005
≥1 USD $0.36005
≥10 USD $0.29545
≥100 USD $0.28595
≥500 USD $0.27645
≥1000 USD $0.2679
Inventory: 1237
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series UltraFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 49W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 425pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 10A
Drain-source On Resistance-Max 0.168Ohm
DS Breakdown Voltage-Min 100V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
HUFA76609D3S+price,HUFA76609D3S+datasheet,HUFA76609D3S+in stock,buy+HUFA76609D3S,finder+HUFA76609D3S,HUFA76609D3S+tutorials,HUFA76609D3S+download