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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $1.6
Unit Price: USD $1.60455
≥1 USD $1.60455
≥10 USD $1.3167
≥100 USD $1.2749
≥500 USD $1.23405
≥1000 USD $1.1932
Inventory: 74453
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 0.019Ohm
Drain Current-Max (Abs) (ID) 59A
JEDEC-95 Code TO-220AB
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Input Capacitance (Ciss) (Max) @ Vds 1.765pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 17m Ω @ 59A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 130W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series UltraFET?
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole

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