FQD630TF
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $0.3
Unit Price: USD $0.2992
≥1 USD $0.2992
Inventory: 206186
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 163 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 28A
Drain-source On Resistance-Max 0.4Ohm
Drain Current-Max (Abs) (ID) 7A
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 400m Ω @ 3.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta 46W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series QFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Alternative Model
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