FQB5P10TM
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
P-CHANNEL POWER MOSFET
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 55 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 18A
Drain Current-Max (Abs) (ID) 4.5A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 1.05 Ω @ 2.25A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.75W Ta 40W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series QFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Alternative Model
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