FDZ299P
RoHS
/
Package 9-WFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
P-CHANNEL POWER MOSFET
PDF
/
Buying Options
Total Price: USD $0.28
Unit Price: USD $0.2816
≥1 USD $0.2816
Inventory: 1159
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 9-WFBGA
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Terminal Finish NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 9
JESD-30 Code S-PBGA-B9
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.7W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 742pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 4.6A
Drain-source On Resistance-Max 0.055Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 48 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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