FDW252P
RoHS 
RoHS compliant
RoHS compliantPackage 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
P-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $1.59
Unit Price: USD $1.5922
≥1 USD $1.5922
≥10 USD $1.30625
≥100 USD $1.2654
≥500 USD $1.22455
≥1000 USD $1.18465
Inventory: 1149
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.5m Ω @ 8.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5.045pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta
Gate Charge (Qg) (Max) @ Vgs 66nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 8.8A
Drain-source On Resistance-Max 0.0125Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 20V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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