FDP75N08
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $0.99
Unit Price: USD $0.9856
≥1 USD $0.9856
Inventory: 421
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 1164 mJ
DS Breakdown Voltage-Min 75V
Pulsed Drain Current-Max (IDM) 300A
Drain-source On Resistance-Max 0.011Ohm
Drain Current-Max (Abs) (ID) 75A
JEDEC-95 Code TO-220AB
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V
Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 4.468pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 11m Ω @ 37.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 131W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE ENERGY RATED
Terminal Finish MATTE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series UniFET?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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