Avalanche Energy Rating (Eas) 58 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 180A
Drain-source On Resistance-Max 0.012Ohm
Drain Current-Max (Abs) (ID) 48A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Current - Continuous Drain (Id) @ 25°C 48A Ta
Input Capacitance (Ciss) (Max) @ Vds 1.25pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 12m Ω @ 24A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 52W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT APPLICABLE
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -65°C~175°C TJ