FDP14AN06LA0
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $2.65
Unit Price: USD $2.6488
≥1 USD $2.6488
Inventory: 1197
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 46 mJ
DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 0.012Ohm
Drain Current-Max (Abs) (ID) 10A
JEDEC-95 Code TO-263AB
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Current - Continuous Drain (Id) @ 25°C 10A Ta 67A Tc
Input Capacitance (Ciss) (Max) @ Vds 2.9pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 11.6m Ω @ 67A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 125W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT APPLICABLE
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish MATTE TIN
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series PowerTrench?
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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