Avalanche Energy Rating (Eas) 32 mJ
DS Breakdown Voltage-Min 25V
Pulsed Drain Current-Max (IDM) 100A
Drain-source On Resistance-Max 0.0075Ohm
Drain Current-Max (Abs) (ID) 17.7A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17.7A Ta 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 1.49pF @ 13V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 7.5m Ω @ 17.7A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.7W Ta 39W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Reach Compliance Code unknown
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ