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RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL SILICON MOSFET
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PB

Technical

Operating Temperature 150°C TJ
Packaging Tray
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 190W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3Ohm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 30V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

Compliance

RoHS Status ROHS3 Compliant

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