Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Rds On (Max) @ Id, Vgs 33mOhm @ 20A, 10V
Power Dissipation-Max 1.65W Ta 65W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ