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UPA2810T1L-E2-AY

RENESAS ELECTRONICS CORP
RoHS
RoHS RoHS compliant
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description P-CHANNEL SINGLE WITH BUILT-IN DIODE 8 EAR99 Mosfet Transistor 13A 3.8W 30V 0.012Ohm
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Buying Options
Total Price: USD $0.96
Unit Price: USD $0.9592
≥1 USD $0.9592
Inventory: 170463
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Power Dissipation-Max (Abs) 3.8W
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 16.9 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 78A
Drain-source On Resistance-Max 0.012Ohm
Drain Current-Max (Abs) (ID) 13A
Polarity/Channel Type P-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PDSO-F8
Pin Count 8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Subcategory Other Transistors
Terminal Finish MATTE TIN
ECCN Code EAR99
JESD-609 Code e3

Physical

Transistor Element Material SILICON
Number of Terminals 8
Surface Mount YES

Supply Chain

Factory Lead Time [object Object]

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