Power Dissipation-Max (Abs) 3.8W
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 16.9 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 78A
Drain-source On Resistance-Max 0.012Ohm
Drain Current-Max (Abs) (ID) 13A
Polarity/Channel Type P-CHANNEL
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Other Transistors
Terminal Finish MATTE TIN