Feedback Cap-Max (Crss) 220 pF
DS Breakdown Voltage-Min 40V
Drain-source On Resistance-Max 0.01Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Turn-Off Delay Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 10m Ω @ 17.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Ta 77W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 175°C TJ