DS Breakdown Voltage-Min 250V
Pulsed Drain Current-Max (IDM) 20A
Drain-source On Resistance-Max 0.23Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 10A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Rds On (Max) @ Id, Vgs 230m Ω @ 5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 25W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ