HAT2170H-EL-E
RoHS 
RoHS compliant
RoHS compliantPackage SC-100, SOT-669
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 45A LFPAK
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Buying Options
Total Price: USD $0.67
Unit Price: USD $0.6707
≥1 USD $0.6707
≥10 USD $0.551
≥100 USD $0.53295
≥500 USD $0.51585
≥1000 USD $0.49875
Inventory: 1147
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 5
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4650pF @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.1 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 180A
DS Breakdown Voltage-Min 40V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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