HAT2166HWS-E
RoHS
/
Package SC-100, SOT-669
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH LFPAK-5
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Technical
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 25W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
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