Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 30A
Turn-Off Delay Time 48 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Ta
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 10V
Rds On (Max) @ Id, Vgs 8.2m Ω @ 15A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 15W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 20
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ