2SK4151TZ-E
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 1A TO-92
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Buying Options
Total Price: USD $0.91
Unit Price: USD $0.91191
≥1 USD $0.91191
≥10 USD $0.860295
≥100 USD $0.811598
≥500 USD $0.765663
≥1000 USD $0.722323
Inventory: 1240
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 750mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.95 Ω @ 500mA, 4V
Input Capacitance (Ciss) (Max) @ Vds 98pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 4V
Rise Time 12ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Vgs (Max) ±10V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.0025Ohm
Pulsed Drain Current-Max (IDM) 4A
DS Breakdown Voltage-Min 150V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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