2SK2315TYTR-E
RoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 2A 4-UPAK
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 36
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 1A, 4V
Input Capacitance (Ciss) (Max) @ Vds 173pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Drive Voltage (Max Rds On,Min Rds On) 3V 4V
Vgs (Max) ±20V
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.45Ohm
Pulsed Drain Current-Max (IDM) 4A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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