Pulsed Drain Current-Max (IDM) 7A
Drain to Source Breakdown Voltage 1.5kV
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 150 ns
Drive Voltage (Max Rds On,Min Rds On) 15V
Drain to Source Voltage (Vdss) 1500V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Input Capacitance (Ciss) (Max) @ Vds 984.7pF @ 30V
Rds On (Max) @ Id, Vgs 12 Ω @ 1A, 15V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Copper (Sn/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ