2SK1340-E
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 5A TO-3P
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Buying Options
Total Price: USD $3.49
Unit Price: USD $3.4903
≥1 USD $3.4903
≥10 USD $2.86425
≥100 USD $2.77495
≥500 USD $2.68565
≥1000 USD $2.5954
Inventory: 1103
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Rise Time 70 ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 900V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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