2SK1317-E
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
RENESAS - 2SK1317-E - MOSFET, N, TO-3P
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Buying Options
Total Price: USD $5.8
Unit Price: USD $5.7992
≥1 USD $5.7992
≥10 USD $4.63232
≥100 USD $4.1448
≥500 USD $3.657157
≥1000 USD $3.291446
≥3000 USD $3.084215
Inventory: 1143
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier PRSS0004ZE-A
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 1999
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 2A, 15V
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Rise Time 70ns
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 7A
Nominal Vgs 4 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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