SK8603150L
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerSMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 26A 8HSO
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Buying Options
Total Price: USD $6.55
Unit Price: USD $6.5474
≥1 USD $6.5474
≥10 USD $5.37225
≥100 USD $5.20505
≥500 USD $5.0369
≥1000 USD $4.86875
Inventory: 3005
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerSMD, Flat Leads
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.9W Ta 34W Tc
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 34W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 4.38mA
Input Capacitance (Ciss) (Max) @ Vds 5180pF @ 10V
Current - Continuous Drain (Id) @ 25°C 26A Ta 89A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Rise Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 89A
Gate to Source Voltage (Vgs) 3V
Drain Current-Max (Abs) (ID) 26A
Drain-source On Resistance-Max 0.0035Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 120A
Dimensions
Height 950μm
Length 4.9mm
Width 5.9mm
Compliance
RoHS Status RoHS Compliant
Alternative Model
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