SK8403160L
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerSMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 18A 8HSSO
PDF
/
Buying Options
Total Price: USD $0.93
Unit Price: USD $0.9328
≥1 USD $0.9328
≥10 USD $0.76296
≥100 USD $0.593736
≥500 USD $0.503254
≥1000 USD $0.409957
Inventory: 1199
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerSMD, Flat Leads
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2W Ta 28W Tc
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 28W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 3V @ 3.35mA
Input Capacitance (Ciss) (Max) @ Vds 3920pF @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta 70A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 3V
Drain-source On Resistance-Max 0.0043Ohm
Drain to Source Breakdown Voltage 30V
Dimensions
Height 950μm
Length 3.05mm
Width 3.05mm
Compliance
RoHS Status RoHS Compliant
Alternative Model
Recommended For You
SK8403160L+price,SK8403160L+datasheet,SK8403160L+in stock,buy+SK8403160L,finder+SK8403160L,SK8403160L+tutorials,SK8403160L+download