Drain to Source Breakdown Voltage -12V
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -4A
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 42m Ω @ 1A, 4V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 700mW Ta
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ