Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 2.1A
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.1A Ta
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Rds On (Max) @ Id, Vgs 130m Ω @ 1A, 4V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 600mW Ta
Reach Compliance Code unknown
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 125°C TJ