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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 7A TO-220D
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Technical Details

Compliance

RoHS Status Non-RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 130 mJ
Pulsed Drain Current-Max (IDM) 14A
Drain-source On Resistance-Max 1Ohm
Drain Current-Max (Abs) (ID) 7A
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 7A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 70ns
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 20V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 1 Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta 40W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Current Rating 8A
Reach Compliance Code unknown
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
HTS Code 8541.29.00.95
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
Published 2004
Packaging Bulk
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole

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