WPB4002
RoHS
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Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tray Through Hole N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 23A Ta 23A 220W 84ns
PDF
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Buying Options
Total Price: USD $68.77
Unit Price: USD $68.76765
≥1 USD $68.76765
≥10 USD $66.61875
≥100 USD $64.46985
≥500 USD $62.32095
≥1000 USD $55.8733
Inventory: 1135
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 80A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-247
Continuous Drain Current (ID) 23A
Turn-Off Delay Time 234 ns
Fall Time (Typ) 84 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Rise Time 130ns
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Current - Continuous Drain (Id) @ 25°C 23A Ta
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 30V
Rds On (Max) @ Id, Vgs 360m Ω @ 11.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 42 ns
Power Dissipation 220W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta 220W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 2
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2013
Packaging Tray
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
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