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WPB4002-1E

ON Semiconductor
RoHS
/
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Tube Through Hole N-Channel Single Mosfet Transistor 23A Ta 23A 2.5W Ta 220W Tc 84ns
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Buying Options
Total Price: USD $3.8
Unit Price: USD $3.801503
≥1 USD $3.801503
≥10 USD $3.586321
≥100 USD $3.383324
≥500 USD $3.191816
≥1000 USD $3.01114
Inventory: 1195
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 23A
Turn-Off Delay Time 234 ns
Fall Time (Typ) 84 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 130ns
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Current - Continuous Drain (Id) @ 25°C 23A Ta
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 30V
Rds On (Max) @ Id, Vgs 360m Ω @ 11.5A, 10V
FET Type N-Channel
Turn On Delay Time 42 ns
Element Configuration Single
Power Dissipation-Max 2.5W Ta 220W Tc
Pin Count 3
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Tube
Operating Temperature 150°C TJ

Physical

Weight 6.961991g
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole

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