STDV3055L104T4G
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 12A DPAK
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Buying Options
Total Price: USD $2.42
Unit Price: USD $2.4168
≥1 USD $2.4168
≥10 USD $1.98265
≥100 USD $1.9209
≥500 USD $1.85915
≥1000 USD $1.7974
≥3000 USD $1.6112
Inventory: 39002
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta 48W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.14Ohm
Pulsed Drain Current-Max (IDM) 45A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 61 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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