DS Breakdown Voltage-Min 40V
Pulsed Drain Current-Max (IDM) 75A
Drain-source On Resistance-Max 0.026Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.6A
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7.6A Ta 38A Tc
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 32V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Rds On (Max) @ Id, Vgs 26m Ω @ 20A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.9W Ta 75W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ