DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 72A
Drain-source On Resistance-Max 0.045Ohm
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 24A
Turn-Off Delay Time 23 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 45m Ω @ 10A, 5V
Transistor Application SWITCHING
Turn On Delay Time 9.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.36W Ta 62.5W Tj
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ