SSP45N20B_FP001
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 35A TO-220
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 176W Tc
Element Configuration Single
Power Dissipation 176W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 65mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V
Rise Time 340ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 270 ns
Turn-Off Delay Time 360 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Input Capacitance 4.3nF
Drain to Source Resistance 65mOhm
Rds On Max 65 mΩ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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