Feedback Cap-Max (Crss) 8.5 pF
Drain to Source Breakdown Voltage 450V
Drain Current-Max (Abs) (ID) 0.5A
Gate to Source Voltage (Vgs) 50V
Continuous Drain Current (ID) 500mA
Turn-Off Delay Time 23 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 500mA Tc
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Rds On (Max) @ Id, Vgs 4.25 Ω @ 250mA, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 900mW Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ