Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 1A
Turn-Off Delay Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Input Capacitance (Ciss) (Max) @ Vds 65pF @ 20V
Rds On (Max) @ Id, Vgs 13 Ω @ 500mA, 10V
Power Dissipation-Max 1W Ta 38W Tc
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ