Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta 23W Tc
Element Configuration Single
Rds On (Max) @ Id, Vgs 51m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 20V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V