Continuous Drain Current (ID) 11A
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 35V
Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 20V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Rds On (Max) @ Id, Vgs 25m Ω @ 5.5A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Ta 15W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ