Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta 20W Tc
Element Configuration Single
Turn On Delay Time 7.4 ns
Rds On (Max) @ Id, Vgs 4.9 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 500V