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ON Semiconductor
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Bulk Through Hole P-Channel MOSFET (Metal Oxide) Mosfet Transistor 19A Ta 19A 1W 44ns
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Drain to Source Breakdown Voltage -40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 52 ns
Fall Time (Typ) 44 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Rise Time 40ns
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Ta
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 20V
Halogen Free Halogen Free
Rds On (Max) @ Id, Vgs 59m Ω @ 9.5A, 10V
FET Type P-Channel
Turn On Delay Time 8 ns
Power Dissipation 1W
Power Dissipation-Max 1W Ta 23W Tc
Pin Count 3
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Bismuth (Sn/Bi)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e6
Published 2012
Packaging Bulk
Operating Temperature 150°C TJ

Physical

Number of Pins 3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Mount Through Hole

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