Drain to Source Breakdown Voltage -100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 105 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 20V
Halogen Free Halogen Free
Rds On (Max) @ Id, Vgs 275m Ω @ 5.5A, 10V
Turn On Delay Time 9.5 ns
Element Configuration Single
Power Dissipation-Max 1W Ta 35W Tc
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ