Drain to Source Breakdown Voltage -40V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 81 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 20V
Rds On (Max) @ Id, Vgs 112m Ω @ 5A, 4.5V
Power Dissipation-Max 1W Ta 15W Tc
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ