Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 4.5A
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Rds On (Max) @ Id, Vgs 49m Ω @ 2A, 4.5V
Power Dissipation-Max 1W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ