RFP12N10L
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail
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Buying Options
Total Price: USD $1.06
Unit Price: USD $1.056
≥1 USD $1.056
≥10 USD $0.849376
≥100 USD $0.673024
≥500 USD $0.570486
≥1000 USD $0.464728
≥3000 USD $0.437483
Inventory: 5631
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 12A
Number of Elements 1
Number of Channels 1
Voltage 100V
Power Dissipation-Max 60W Tc
Element Configuration Single
Current 12A
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 12A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Rise Time 70 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 100V
Dimensions
Height 9.4mm
Length 10.67mm
Width 4.83mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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