NVTFS5C680NLTAG
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 7.82A 20A 8WDFN
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Buying Options
Total Price: USD $0.73
Unit Price: USD $0.7304
≥1 USD $0.7304
≥10 USD $0.60016
≥100 USD $0.467016
≥500 USD $0.395824
Inventory: 992
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 20W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 327pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.82A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 7.82A
Drain-source On Resistance-Max 0.0425Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 51 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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